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middle layer and control terminal of a BJT

thyristor which can be switched from the on-state to the off-state and vice versa

slow final part of the output current waveform

gallium arsenide FET with an incorporated pn junction channel between two materials with different band gaps

electronic circuit for driving

component used in semiconductor electronics

threshold value for a current, voltage or frequency switching-on/off

voltage drop in an electronic component when it is at forward bias

biasing by applying an external voltage to increase the barrier potential aiming to block a current

additional cathode

transistor with unipolar carriers flowing along the channel between extrinsic semiconductors and/or other materials

unwanted forward current at cutoff

driver which feeds the gate

resistance for which an increase in the current results in a decreased voltage in electronic circuit

energy source of an electronic circuit

current which flow is considered as started from positive supply terminal and finished at negative supply terminal

blocking state of an electronic component

transistor where the carriers of two polarities cross three alternated extrinsic semiconductors

electronic circuit commonly used to bias the transistor

transistor which carriers flow across the pn junctions

operation of an electronic circuit at higher than its rated maximum power

state at which the controlled variable cannot be sensitively increased by increasing the input

forward voltage at which the breakover occurs

diode that stores a charge at the forward bias and recovers from subsequent reverse bias, thereby causing an abrupt transition of its output impedance

mobile free electron, hole or ion

current when an electronic component is at forward bias

electronic device used optical radiation

diode that keeps the current flowing through it unchanged when the voltage changes

thyristor consisting of four alternated p-layers and n-layers

layer built on n-type semiconductor

bi-layer part of BJT sided with an emitter

diode with a low forward voltage drop and a very fast switching action

driving for establishment the thyristor on-state

obsolete transistor whose electrically isolated p-layer and n-layers are very close to each other

scheme in which the base is common to the input and output circuits while the input is the emitter and the output is the collector

n-layer with corresponding negative electrode of some electronic components

non-adjustable electronic component consisting of a p-layer and n-layer

method of establishing of the predetermined voltages and/or currents for electronic components

diode designed for operation at avalanche breakdown

output data obtained upon the manipulated input data

forward voltage corresponding the cutoff

continuous signal at on-state operation

characteristic point representing the values of variables at which an electronic system is operated

scheme in which the gate is common to the input and output circuits while the input is the source and the output is the drain

insulated-gate FET with the oxide material between the gate and the semiconductor channel

scheme in which the source is common to the input and output circuitswhile the input is the gate and the output is the drain

time of the growth of the reverse current in the GTO thyristor

MOSFET operation such that changing the gate voltage from zero to a finite value increases the magnitude of the drain current

maintaining an output stability

initial region of the output characteristic with the high-changing current upon the small change of voltage

characteristic of an electronic component relating the output voltage and the input voltage or the same currents

time between the switching-on and switching-off

terminal intended for driving

transistor consisting of a p-layer between two n-layers

extreme layer of a bipolar transistor that emits majority carriers

optoelectronic device utilizing optical radiation to provide coupling while the output is isolated from the input

control operation of an on-state and off-state establishment

region of the output characteristic where the breakdown occurs

diode that emits optical radiation when excited by a current

time response of a physical quantity (voltage, current, or field strength)

input characteristic of BJT

ratio of the collector current to the emitter current in the active region

FET with one or more gate regions which form pn junctions with the channel

ratio of the increment in the drain current to a corresponding incremental change of the gate voltage

transistor that operates on similar principles to its low-power counterpart, but is able to carry a larger forward current and typically is able to support a larger reverse voltage

inner part of an electronic component capable to emit or receive carriers

diode of variable capacitance by means of which conductivity is changed

physical quantity (voltage, current, or field strength) carrying data

bipolar transistor controlled by a current flowing through the control terminal

region of the output characteristic below the cutoff current

transition of electronic circuit from on-state to off-state and vice versa

scheme in which the collector is common to the input and output circuits while the input is the base and the output is the emitter

resistor whose number of carriers is strongly varying with the applied voltage

conduction state of an electronic component

MOSFET passing appreciable drain current at the zero gate voltage, which may be adjusted according to the polarity of the applied gate voltage

maximal value of the reverse voltage within a given time interval

two bipolar transistors connected in such a way that the current amplified by the first transistor is amplified further by the second one

operating line for currents and voltages on the output characteristics for a fixed load

interconnection of electrical and electronic components

output characteristic of a bipolar transistor in the common emitter scheme

thyristor with substantially the same behaviour in the first and third quadrants of the output characteristic

optoelectronic device that utilizes the change of resistivity upon the absorption of optical radiation

increase of current or voltage waveform

EL ecscheme in which the drain is common to the input and output circuits while the input is the gate and the output is the source

p-layer and positive electrode of some electronic components

diode with a contact between two pn junctions as a result of widening of one or both of them

minimal forward current of the thyristor on-state operation

region of the transistor output characteristic with high output stability

region between the metal and n-layer or p-layer

biasing by applying an external voltage to overcome the barrier potential aiming to pass current

maximal permissible gate-source voltage of the FET

sin. diode with negative resistance in a certain range of the forward bias

electronic device in which electric polarization produces a mechanical deformation which depends linearly on the electric field strength, and conversely a deformation produces an electric polarization

scheme in which the emitter is common to the input and output circuits while the input is the base and the output is the collector

auxiliary layer and control terminal in which the electric field due to an applied voltage is effective

breakdown region in which the short-term operation is possible

bi-layer part of the BJT sided with a collector

voltage at which the breakdown occurs

ability of an electronic system to keep its variables unchanged during a specified time interval

region between the p-layer and the n-layer

current-voltage dependence at the input of electronic component

gain measured at the on-state operation

thyristor switching-off by the external circuit which causes the thyristor to become reverse biased

layer built on p-type semiconductor

diode with permissible reverse current upon the Zener voltage

adjustable electronic component comprising at least three layers of semiconductor and, occasionally, of other materials, which can be turned to the on-state and vice versa

voltage drop at a reverse bias

bipolar transistor with isolated control terminal

voltage controlled MOS GTO thyristor

minimum reverse voltage at which the Zener breakdown occur

instant of firing measured in degrees or radians

semiconductor in which carrier concentration differs from the intrinsic semiconductor

extreme layer of a bipolar transistor that collects majority carriers

sheetlike mass of an electronic component of definite thickness

MOSFET operation such that changing the gate voltage from zero to a finite value decreases the magnitude of the drain current

ratio of the small fraction of the output current to the small fraction of the input current of a transistor

breackdown caused by the avalanche

forward voltage of a diode at which the forward current suddenly increases

external part of electrode intended for connections

ratio of the collector current to the base current in the active region

time required for the current or voltage to recover its normal value after instantaneous transition from a forward bias to a reverse bias

electronic component with the square-low input characteristic

bipolar transistor controlled by a current flowing through the control terminal

electronic device consisting of a pair of reverse-parallel connected Zener diodes with a high breakdown voltage in both directions

ratio of output signal to input signal, usually measured in decibels

semi-adjustable electronic component comprising at least three layers of semiconductor which can be turned to the on-state

input characteristic of FET

unipolar transistor whose output is controlled by an electric field arising from a voltage applied to the control terminal

gate voltage of a unipolar transistor at which the drain current suddenly increases

current flowing at a reverse bias

diode that has an accurate square law output characteristic at the reverse bias

JFET with two gates

output characteristic of a unipolar transistor in the common source scheme

diode that produces an optical radiation

MOSFET passing the zero drain current at the zero gate voltage, which may be adjusted by the application of a gate voltage of appropriate polarity

transistor consisting of an n-layer between two p-layers

lack of channel region near the drain and corresponding point of the output characteristic of the FET

diode that operates on similar principles to its low-power counterpart, but is able to carry a larger forward current and typically is able to support a larger reverse voltage

device composed of electrical and electronic components connected within the electronic circuit

saturation region of alternative width

extreme layer of a unipolar transistor that collects majority carriers

extreme layer of a unipolar transistor that emits the majority carriers

point on the output characteristic of a thyristor for which the differential resistance is zero and where the voltage reaches a maximum value

physical structure having a metal layer placed on top of an oxide insulator, which in turn is on top of a semiconductor layer

non-adjusted thyristor having substantially the same behaviour at the forward bias and reverse bias

voltage and current conditions and the region of the output characteristic over which the electronic component can be expected to operate without damage

system composed on electrical and electronic components or electronic devices

type of carrier constituting more than half of the total carrier density

breakdown region in which the transistor is damaged

relation between the output current and output voltage of an electronic component

abrupt change of an insulator medium resulting in an increased number of carriers

electromagnetic radiation of very short wavelength, such as visible or ultraviolet light affecting an electronic system