reduction of the waveform

time response of a physical quantity (voltage, current, or field strength)

signal in which any value is represented by a single predetermined voltage or current level

gain as the ratio if the input current to the output current

potential difference across the depletion layer

current flowing at a reverse bias

electronics dealing with digital signals

particle in which the total number of electrons is not equal to the total number of protons

resistance for which an increase in the current results in an increased voltage in electronic circuit

transfer of a controlled variable between two consecutive states

ac part of the dc voltage waveform

region between the p-layer and the n-layer

ratio of output signal to input signal, usually measured in decibels

electronics dealing with vacuum tubes

Electronics Introduction

dense central part of an atom

unwanted reverse current

abrupt change of an insulator medium resulting in an increased number of carriers

converter that turns dc to ac

electronic technology for graphics transfer

iliary layer

voltage at which the breakdown occurs

voltage drop at a reverse bias

converter that turns ac to dc

field of electronic engineering dealing with operations on or analysis of data

particle of nucleus with a positive electric charge

foreign atoms in an intrinsic semiconductor

sin.

breakdown caused by the reverse breakdown voltage

method of establishing of the predetermined voltages and/or currents for electronic components

sudden reduction of the supply voltage followed by voltage recovery after a short period of time

electronic technology for sound transfer

time interval between the instant of the input step change and the instant, when the step response remains within the tolerance area

half of a periodical waveform

sin.

small fraction of an electronic component

substance containing free ions as majority carriers

sin.

energy source of an electronic circuit

process whereby the controlled variable is continuously measured, compared with the reference and influenced in such a manner as to adjust to the reference

region emptied of carriers near the pn junction

breackdown caused by the avalanche

resistance for which an increase in the current results in a decreased voltage in electronic circuit

continuous set of frequencies lying between two specified frequencies of the frequency response

voltage of the solo phase in the multi-phase load of an electronic circuit

breakdown caused by the influence of a strong electric field in a pn junction

electronic device for changing one or more characteristics associated with signal or energy

relative change of resistance of an electronic component when the temperature changes

temperature coefficient at which the current rises with increasing temperature

frequency region lying above or below the midband

pentavalent impurity for doping

sin.

field of science, engineering and technology dealing with semiconductors and vacuum tubes

sin.

layer built on n-type semiconductor

field of electronics which deals with power converters

electronic component capable for attenuation without energy supply

frequency band throughout which the attenuation is less than a specified value

sound signal frequency below the visible light

electronic component which meets for amplification or acts as a source of energy

sin.

repetitive current or voltage which waveform has no time delays

electron placed on the valence bond

undesired variation of the the frequency of the fundamental

gain as the ratio of the output voltage to the input voltage

difference of maximal and minimal values of a waveform within a given time interval

biasing by applying an external voltage to overcome the barrier potential aiming to pass current

maximal value of the reverse current within a given time interval

unwanted perturbation to the signal

sin.

engineering dealing with electronics

crystal of intrinsic semiconductor

mobile free electron, hole or ion

technology dealing with electronics

place of an absentee electron at a position where it could exist

extrinsic semiconductor whose most carriers are holes

device composed of electrical and electronic components connected within the electronic circuit

voltage drop in an electronic component when it is at forward bias

sin.

number of protons in the nucleus

quantitative measure of magnitude and phase of the controlled variable as a function of time in comparison to the reference

temperature coefficient at which the current drops with increasing temperature

signal in which any value is represented by a single predetermined voltage or current level

document summarizing the performance and technical data

component used in semiconductor electronics

frequency corresponding to the audio signal

frequency band throughout which the attenuation is greater than a specified value

type of carrier constituting less than half of the total carrier density

undesired transient that occurs before the output settles to its intended value

expected period of the electronic system use in service

biasing by applying an external voltage to increase the barrier potential aiming to block a current

electron that is not attached to an atom but is free to move

minimum reverse voltage at which the Zener breakdown occur

single-element semiconductor with definite carrier concentration

feedback intended to attenuate the output

physical quantity (voltage, current, or field strength) carrying data

material in which each atom shares electrons with the neighbor atoms

system composed on electrical and electronic components or electronic devices

particle of nucleus without an electric charge

sin.

sin.

interaction between negative and positive carriers with resulting equalization of their charges

orbit on which electrons turn around the nucleus

dc with ripple

resistance of a semiconductor rapidly variated with temperature, as well as an occasionally negative resistance

output data obtained upon the manipulated input data

interconnection of electrical and electronic components

undesired slow variation of the carrier density

waveform of short duration with abrupt variation of current or voltage followed by a rapid return to the initial value

extrinsic semiconductor whose most carriers are electrons

pair of positive and negative ions of the pn junction

trivalent impurity for doping

period of a repetitive waveform

measure of the frequency band as a difference between the cutoff frequencies

lowest frequency of a periodic waveform spectrum

high current which destroys an electronic circuit due to a quick and large temperature elevation

frequency at which energy begins to be attenuated rather than passing through

current when an electronic component is at forward bias

path connecting an output of the electronic system with one of the inputs

electronics dealing with semiconductors

input data which represents the desired controlled variable

bond placed above the valence bond

signal audible for the human ear

semiconductor in which carrier concentration differs from the intrinsic semiconductor

voltage between the phases of a multi-phase electronic system

increase of current or voltage waveform

electronic circuit for attenuation

electronic circuit for attenuation

field of electronics dealing with analogue signals

sin.

layer built on p-type semiconductor

particle of atom with a negative elementary electric charge

outermost bond keeping the longest way off the nucleus

science dealing with electronics

sin.

ratio of energy stored during the transient (power consumption) to the returned power (power conductivity)

"transient caused by a sudden input variation and characterized by a temporary existing of the output below the value of the referenced output "

"transient caused by a sudden input variation and characterized by a temporary exceeding the value of the referenced output "

property of material to produce carriers upon heating

field of electronics dealing with radio

cumulative process in which a carrier gives rise to a large number of carriers

sin.

electronic technology for sound transfer

signal presented by the continuous voltage or current level

undesired variation of the the amplitude of the fundamental

type of carrier constituting more than half of the total carrier density

range of the step response where the controlled variable lies between the specified limits of the reference deviation

peak-to-peak value of a voltage waveform

unidirectional pulse of relatively short duration

time response on the step reference

sin.

sheetlike mass of an electronic component of definite thickness

addition of impurities to an intrinsic semiconductor

sin

electronic technology for video and sound transfer

sin.

representation of information in a formalized manner in electronic system

electronic technology for transfer of alphanumeric symbols

bond that is characterized by the sharing of pairs of electrons between atoms